IRFF9130
vs
JANTX2N6849
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
SILICONIX INC
|
HARRIS SEMICONDUCTOR
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
6.5 A
|
6.5 A
|
Drain-source On Resistance-Max |
0.3 Ω
|
0.3 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-205
|
TO-205AF
|
JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
METAL
|
METAL
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
12
|
7
|
Package Description |
|
TO-39, 3 PIN
|
Avalanche Energy Rating (Eas) |
|
500 mJ
|
Case Connection |
|
DRAIN
|
Feedback Cap-Max (Crss) |
|
100 pF
|
Operating Temperature-Max |
|
150 °C
|
Operating Temperature-Min |
|
-55 °C
|
Power Dissipation-Max (Abs) |
|
25 W
|
Pulsed Drain Current-Max (IDM) |
|
25 A
|
Reference Standard |
|
MIL-19500
|
Transistor Application |
|
SWITCHING
|
Turn-off Time-Max (toff) |
|
280 ns
|
Turn-on Time-Max (ton) |
|
200 ns
|
|
|
|
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