IRFF222R
vs
IRFF223
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INTERSIL CORP
MOTOROLA SEMICONDUCTOR PRODUCTS
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
85 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
Single
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
3 A
Drain-source On Resistance-Max
1.2 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-205AF
JESD-30 Code
O-MBCY-W3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
METAL
Package Shape
ROUND
Package Style
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
20 W
Power Dissipation-Max (Abs)
20 W
20 W
Pulsed Drain Current-Max (IDM)
12 A
Qualification Status
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Terminal Form
WIRE
Terminal Position
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
160 ns
Turn-on Time-Max (ton)
100 ns
Base Number Matches
3
9
Package Description
,
Drain Current-Max (Abs) (ID)
3 A
Compare IRFF222R with alternatives