IRFF220-JQR-B
vs
JANTXV2N6790
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Active
|
Contact Manufacturer
|
Ihs Manufacturer |
TT ELECTRONICS PLC
|
SEMICOA CORP
|
Package Description |
CYLINDRICAL, O-MBCY-W3
|
HERMETIC SEALED, TO-39, 3 PIN
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
200 V
|
200 V
|
Drain Current-Max (ID) |
3.5 A
|
3.5 A
|
Drain-source On Resistance-Max |
0.92 Ω
|
0.85 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-205AF
|
TO-205AF
|
JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
METAL
|
METAL
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
14 A
|
14 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
AMPLIFIER
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
6
|
Avalanche Energy Rating (Eas) |
|
0.242 mJ
|
Reference Standard |
|
MIL-19500
|
|
|
|
Compare IRFF220-JQR-B with alternatives
Compare JANTXV2N6790 with alternatives