IRFF123
vs
JANTXV2N6796
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
DEFENSE LOGISTICS AGENCY
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
80 V
100 V
Drain Current-Max (ID)
5 A
8 A
Drain-source On Resistance-Max
0.4 Ω
0.18 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-205AF
TO-205AF
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
20 W
Pulsed Drain Current-Max (IDM)
20 A
32 A
Qualification Status
Not Qualified
Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Transistor Element Material
SILICON
SILICON
Base Number Matches
9
8
Additional Feature
RADIATION HARDENED
Case Connection
DRAIN
Reference Standard
MILITARY STANDARD (USA)
Transistor Application
SWITCHING
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