IRFE9230
vs
SI7431DP-T1-E3
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
SEMELAB LTD
|
VISHAY INTERTECHNOLOGY INC
|
| Package Description |
CHIP CARRIER, R-CQCC-N15
|
ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
AVALANCHE ENERGY RATING
|
ULTRA-LOW RESISTANCE
|
| Avalanche Energy Rating (Eas) |
75 mJ
|
45 mJ
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
200 V
|
200 V
|
| Drain Current-Max (ID) |
3.6 A
|
2.2 A
|
| Drain-source On Resistance-Max |
0.825 Ω
|
0.174 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-CQCC-N15
|
R-XDSO-C5
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
15
|
5
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
CHIP CARRIER
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
14.4 A
|
30 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
NO LEAD
|
C BEND
|
| Terminal Position |
QUAD
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
4
|
1
|
| Factory Lead Time |
|
16 Weeks, 3 Days
|
| Samacsys Manufacturer |
|
Vishay
|
| Case Connection |
|
DRAIN
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Power Dissipation-Max (Abs) |
|
5.4 W
|
| Terminal Finish |
|
Matte Tin (Sn) - annealed
|
|
|
|
Compare IRFE9230 with alternatives
Compare SI7431DP-T1-E3 with alternatives