IRFE9220E4
vs
IRFE9220
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
TT ELECTRONICS PLC
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
CHIP CARRIER, R-CQCC-N15
|
CHIP CARRIER, R-CQCC-N15
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| DS Breakdown Voltage-Min |
200 V
|
200 V
|
| Drain Current-Max (ID) |
2.1 A
|
2.1 A
|
| Drain-source On Resistance-Max |
1.725 Ω
|
1.725 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-CQCC-N15
|
R-CQCC-N15
|
| JESD-609 Code |
e4
|
e0
|
| Number of Terminals |
15
|
15
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
GOLD
|
TIN LEAD
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
QUAD
|
QUAD
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Additional Feature |
|
HIGH RELIABILITY
|
| Avalanche Energy Rating (Eas) |
|
180 mJ
|
| Case Connection |
|
SOURCE
|
| Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
| Number of Elements |
|
1
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
14 W
|
| Pulsed Drain Current-Max (IDM) |
|
8.4 A
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare IRFE9220E4 with alternatives
Compare IRFE9220 with alternatives