IRFE120PBF
vs
JANTXV2N6788U
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
DEFENSE LOGISTICS AGENCY
|
Part Package Code |
TO-39
|
|
Package Description |
CHIP CARRIER, R-CQCC-N18
|
|
Pin Count |
3
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Additional Feature |
AVALANCHE ENERGY RATED
|
|
Avalanche Energy Rating (Eas) |
0.242 mJ
|
|
Case Connection |
SOURCE
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
4.5 A
|
6 A
|
Drain-source On Resistance-Max |
0.35 Ω
|
0.3 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-CQCC-N18
|
S-CQCC-N18
|
Number of Elements |
1
|
|
Number of Terminals |
18
|
18
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
RECTANGULAR
|
SQUARE
|
Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
14 W
|
|
Pulsed Drain Current-Max (IDM) |
18 A
|
|
Qualification Status |
Not Qualified
|
Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
NO LEAD
|
NO LEAD
|
Terminal Position |
QUAD
|
QUAD
|
Time@Peak Reflow Temperature-Max (s) |
40
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Max (toff) |
110 ns
|
|
Turn-on Time-Max (ton) |
110 ns
|
|
Base Number Matches |
1
|
4
|
Operating Temperature-Min |
|
-55 °C
|
Reference Standard |
|
MILITARY STANDARD (USA)
|
|
|
|
Compare IRFE120PBF with alternatives
Compare JANTXV2N6788U with alternatives