IRFE110PBF
vs
IRFE110
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
MOTOROLA SEMICONDUCTOR PRODUCTS
|
| Package Description |
CHIP CARRIER, R-CQCC-N15
|
,
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
HIGH RELIABILITY
|
|
| Avalanche Energy Rating (Eas) |
7 mJ
|
|
| Case Connection |
SOURCE
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
100 V
|
|
| Drain Current-Max (ID) |
3.5 A
|
3.1 A
|
| Drain-source On Resistance-Max |
0.69 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-CQCC-N15
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
15
|
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
CHIP CARRIER
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
14 A
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
NO LEAD
|
|
| Terminal Position |
QUAD
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
2
|
6
|
| JESD-609 Code |
|
e0
|
| Power Dissipation-Max (Abs) |
|
11 W
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|
Compare IRFE110PBF with alternatives