IRFD9120PBF
vs
IRFD9120PBF
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
VISHAY SILICONIX
|
Part Package Code |
DIP
|
DIP
|
Package Description |
LEAD FREE, HEXDIP-4
|
ROHS COMPLIANT, HVMDIP-4
|
Pin Count |
4
|
4
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
Drain Current-Max (ID) |
1 A
|
1 A
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDIP-T4
|
R-PDIP-T4
|
JESD-609 Code |
e3
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
4
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Power Dissipation-Max (Abs) |
1.3 W
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
MATTE TIN
|
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Samacsys Manufacturer |
|
Vishay
|
Additional Feature |
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas) |
|
140 mJ
|
Case Connection |
|
DRAIN
|
DS Breakdown Voltage-Min |
|
100 V
|
Drain-source On Resistance-Max |
|
0.6 Ω
|
Operating Mode |
|
ENHANCEMENT MODE
|
Pulsed Drain Current-Max (IDM) |
|
8 A
|
|
|
|
Compare IRFD9120PBF with alternatives
Compare IRFD9120PBF with alternatives