IRFD320PBF
vs
IRFD320PBF
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
End Of Life
|
End Of Life
|
| Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
VISHAY SILICONIX
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
8 Weeks
|
|
| Samacsys Manufacturer |
Vishay
|
Vishay
|
| Additional Feature |
AVALANCHE RATED
|
AVALANCHE RATED
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
400 V
|
400 V
|
| Drain Current-Max (ID) |
0.49 A
|
0.49 A
|
| Drain-source On Resistance-Max |
1.8 Ω
|
1.8 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDIP-T3
|
R-PDIP-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
1 W
|
1 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
Yes
|
| Part Package Code |
|
DIP
|
| Package Description |
|
IN-LINE, R-PDIP-T3
|
| Pin Count |
|
4
|
|
|
|