IRFD123PBF
vs
IRFD123PBF
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
End Of Life
|
End Of Life
|
Ihs Manufacturer |
VISHAY SILICONIX
|
VISHAY INTERTECHNOLOGY INC
|
Part Package Code |
DIP
|
|
Package Description |
IN-LINE, R-PDIP-T4
|
|
Pin Count |
4
|
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Vishay
|
Vishay
|
Additional Feature |
AVALANCHE RATED
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas) |
100 mJ
|
100 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
1.3 A
|
1.3 A
|
Drain-source On Resistance-Max |
0.27 Ω
|
0.27 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDIP-T4
|
R-PDIP-T4
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
4
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
1.3 W
|
1.3 W
|
Pulsed Drain Current-Max (IDM) |
10 A
|
10 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Factory Lead Time |
|
18 Weeks, 1 Day
|
|
|
|
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