IRFD110
vs
IRFD110PBF
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
MOTOROLA INC
|
VISHAY INTERTECHNOLOGY INC
|
| Package Description |
IN-LINE, R-PDIP-T3
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
| DS Breakdown Voltage-Min |
100 V
|
|
| Drain Current-Max (ID) |
1 A
|
|
| Drain-source On Resistance-Max |
0.6 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
| Feedback Cap-Max (Crss) |
25 pF
|
|
| JESD-30 Code |
R-PDIP-T3
|
|
| JESD-609 Code |
e0
|
e3
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
IN-LINE
|
|
| Polarity/Channel Type |
N-CHANNEL
|
|
| Power Dissipation Ambient-Max |
1 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
|
| Terminal Finish |
TIN LEAD
|
Matte Tin (Sn) - annealed
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Position |
DUAL
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
1
|
| Factory Lead Time |
|
17 Weeks, 4 Days
|
| Samacsys Manufacturer |
|
Vishay
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|