IRFBE30PBF vs BUZ80A feature comparison

IRFBE30PBF International Rectifier

Buy Now Datasheet

BUZ80A onsemi

Buy Now
Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP ON SEMICONDUCTOR
Part Package Code TO-220AB
Package Description LEAD FREE PACKAGE-3 ,
Pin Count 3
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 260 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 4.1 A 3 A
Drain-source On Resistance-Max 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 250 235
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 125 W 75 W
Pulsed Drain Current-Max (IDM) 16 A
Qualification Status Not Qualified
Surface Mount NO NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Base Number Matches 1 1

Compare IRFBE30PBF with alternatives

Compare BUZ80A with alternatives