IRFBC40STRR vs STB6NK60ZT4 feature comparison

IRFBC40STRR International Rectifier

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STB6NK60ZT4 STMicroelectronics

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Part Life Cycle Code Transferred Active
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP STMICROELECTRONICS
Package Description SMALL OUTLINE, R-PSSO-G2 D2PAK-3
Pin Count 3 3
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 570 mJ 210 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 6.2 A 6 A
Drain-source On Resistance-Max 1.2 Ω 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 130 W
Pulsed Drain Current-Max (IDM) 25 A 24 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Rohs Code Yes
Factory Lead Time 14 Weeks
Date Of Intro 1980-01-04
Samacsys Manufacturer STMicroelectronics
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 245
Power Dissipation-Max (Abs) 104 W
Terminal Finish Matte Tin (Sn) - annealed
Time@Peak Reflow Temperature-Max (s) 30

Compare IRFBC40STRR with alternatives

Compare STB6NK60ZT4 with alternatives