IRFBC40SPBF vs STB6NK60ZT4 feature comparison

IRFBC40SPBF International Rectifier

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STB6NK60ZT4 STMicroelectronics

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP STMICROELECTRONICS
Package Description SMALL OUTLINE, R-PSSO-G2 D2PAK-3
Pin Count 3 3
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 570 mJ 210 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 6.2 A 6 A
Drain-source On Resistance-Max 1.2 Ω 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 130 W
Power Dissipation-Max (Abs) 3.1 W 104 W
Pulsed Drain Current-Max (IDM) 25 A 24 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - annealed
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 1
Factory Lead Time 14 Weeks
Date Of Intro 1980-01-04
Samacsys Manufacturer STMicroelectronics

Compare IRFBC40SPBF with alternatives

Compare STB6NK60ZT4 with alternatives