IRFBC40ASTRLPBF
vs
IRFBC40ASTRRPBF
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
VISHAY SILICONIX
VISHAY INTERTECHNOLOGY INC
Part Package Code
D2PAK
Package Description
SMALL OUTLINE, R-PSSO-G2
SMALL OUTLINE, R-PSSO-G2
Pin Count
4
3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
kg CO2e/kg
8.8
Average Weight (mg)
1979.3
CO2e (mg)
17417.841
Category CO2 Kg
8.8
EU RoHS Version
RoHS 2 (2011/65/EU)
EU RoHS Exemptions
7(a)
Candidate List Date
2010-12-15
Avalanche Energy Rating (Eas)
570 mJ
570 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
600 V
Drain Current-Max (ID)
6.2 A
6.2 A
Drain-source On Resistance-Max
1.2 Ω
1.2 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
e3
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
25 A
25 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
Matte Tin (Sn)
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Factory Lead Time
13 Weeks
Samacsys Manufacturer
Vishay
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max (Abs)
125 W
Time@Peak Reflow Temperature-Max (s)
30
Compare IRFBC40ASTRLPBF with alternatives
Compare IRFBC40ASTRRPBF with alternatives