IRF9Z34NSTRRPBF
vs
MTD1N50E
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
MOTOROLA INC
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Factory Lead Time
4 Weeks
Date Of Intro
1997-08-25
Samacsys Manufacturer
Infineon
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
AVALANCHE RATED
Avalanche Energy Rating (Eas)
180 mJ
45 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
55 V
500 V
Drain Current-Max (ID)
19 A
1 A
Drain-source On Resistance-Max
0.1 Ω
5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
e0
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
P-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
68 A
3 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
4
Package Description
SMALL OUTLINE, R-PSSO-G2
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
40 W
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