IRF9622
vs
IRFR9214
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
VISHAY SILICONIX
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
DRAIN
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
250 V
Drain Current-Max (ID)
3 A
2.7 A
Drain-source On Resistance-Max
2.4 Ω
3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
TO-252
JESD-30 Code
R-PSFM-T3
R-PSSO-G2
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Power Dissipation-Max (Abs)
40 W
Pulsed Drain Current-Max (IDM)
12 A
11 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
6
3
Part Package Code
TO-252
Package Description
DPAK-3
Pin Count
3
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
100 mJ
Transistor Application
SWITCHING
Compare IRF9622 with alternatives
Compare IRFR9214 with alternatives