IRF9612 vs MTH35N06 feature comparison

IRF9612 Samsung Semiconductor

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MTH35N06 Freescale Semiconductor

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC MOTOROLA SEMICONDUCTOR PRODUCTS
Part Package Code SFM
Package Description FLANGE MOUNT, R-PSFM-T3 ,
Pin Count 3
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 110 mJ
Configuration SINGLE WITH BUILT-IN DIODE Single
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 1.5 A
Drain-source On Resistance-Max 4.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type P-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 20 W
Power Dissipation-Max (Abs) 20 W 150 W
Pulsed Drain Current-Max (IDM) 6 A
Qualification Status Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 30 ns
Turn-on Time-Max (ton) 40 ns
Base Number Matches 3 3
Drain Current-Max (Abs) (ID) 35 A

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