IRF9512-009
vs
2SK2726
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Not Recommended
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
RENESAS ELECTRONICS CORP
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
ISOLATED
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
500 V
Drain Current-Max (ID)
2.5 A
7 A
Drain-source On Resistance-Max
1.6 Ω
0.95 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
JESD-609 Code
e3
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
P-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
10 A
28 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
MATTE TIN OVER NICKEL
TIN LEAD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Pbfree Code
Part Package Code
TO-220AB
Package Description
TO-220CFM, 3 PIN
Pin Count
3
Date Of Intro
1997-08-01
Additional Feature
AVALANCHE RATED
JEDEC-95 Code
TO-220AB
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
30 W
Transistor Application
SWITCHING
Compare IRF9512-009 with alternatives
Compare 2SK2726 with alternatives