IRF9240E
vs
RFM5P12
feature comparison
All Stats
Differences Only
Rohs Code
No
No
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
HARRIS SEMICONDUCTOR
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
500 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
120 V
Drain Current-Max (ID)
11 A
5 A
Drain-source On Resistance-Max
0.58 Ω
1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-204AA
TO-204AA
JESD-30 Code
O-MBFM-P2
O-MBFM-P2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
FLANGE MOUNT
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Pulsed Drain Current-Max (IDM)
44 A
15 A
Qualification Status
Not Qualified
Not Qualified
Reference Standard
CECC
Surface Mount
NO
NO
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
4
Package Description
FLANGE MOUNT, O-MBFM-P2
HTS Code
8541.29.00.95
Feedback Cap-Max (Crss)
100 pF
JESD-609 Code
e0
Operating Temperature-Max
150 °C
Power Dissipation Ambient-Max
75 W
Power Dissipation-Max (Abs)
75 W
Terminal Finish
TIN LEAD
Turn-off Time-Max (toff)
250 ns
Turn-on Time-Max (ton)
160 ns
Compare IRF9240E with alternatives
Compare RFM5P12 with alternatives