IRF9240E vs RFM5P12 feature comparison

IRF9240E Infineon Technologies AG

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RFM5P12 Harris Semiconductor

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG HARRIS SEMICONDUCTOR
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 500 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 120 V
Drain Current-Max (ID) 11 A 5 A
Drain-source On Resistance-Max 0.58 Ω 1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA TO-204AA
JESD-30 Code O-MBFM-P2 O-MBFM-P2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL P-CHANNEL
Pulsed Drain Current-Max (IDM) 44 A 15 A
Qualification Status Not Qualified Not Qualified
Reference Standard CECC
Surface Mount NO NO
Terminal Form PIN/PEG PIN/PEG
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 4
Package Description FLANGE MOUNT, O-MBFM-P2
HTS Code 8541.29.00.95
Feedback Cap-Max (Crss) 100 pF
JESD-609 Code e0
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 75 W
Power Dissipation-Max (Abs) 75 W
Terminal Finish TIN LEAD
Turn-off Time-Max (toff) 250 ns
Turn-on Time-Max (ton) 160 ns

Compare IRF9240E with alternatives

Compare RFM5P12 with alternatives