IRF9232
vs
IRF9232
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
HARRIS SEMICONDUCTOR
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
DRAIN
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
5.5 A
5.5 A
Drain-source On Resistance-Max
1.2 Ω
1.2 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-204AA
TO-204AA
JESD-30 Code
O-MBFM-P2
O-MBFM-P2
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Power Dissipation-Max (Abs)
75 W
75 W
Pulsed Drain Current-Max (IDM)
22 A
22 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
BOTTOM
BOTTOM
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
500 mJ
Power Dissipation Ambient-Max
75 W
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
180 ns
Turn-on Time-Max (ton)
150 ns
Compare IRF9232 with alternatives
Compare IRF9232 with alternatives