IRF9140
vs
IRF5NJ9540
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
TT ELECTRONICS PLC
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
HERMETIC SEALED, METAL, 3 PIN
|
CHIP CARRIER, R-XBCC-N3
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
500 mJ
|
260 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
18 A
|
18 A
|
| Drain-source On Resistance-Max |
0.23 Ω
|
0.117 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-3
|
|
| JESD-30 Code |
O-MBFM-P2
|
R-XBCC-N3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
METAL
|
UNSPECIFIED
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
CHIP CARRIER
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
72 A
|
72 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
PIN/PEG
|
NO LEAD
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
10
|
5
|
| Samacsys Manufacturer |
|
Infineon
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Min |
|
-55 °C
|
| Power Dissipation-Max (Abs) |
|
75 W
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
| Turn-off Time-Max (toff) |
|
171 ns
|
| Turn-on Time-Max (ton) |
|
164 ns
|
|
|
|
Compare IRF9140 with alternatives
Compare IRF5NJ9540 with alternatives