IRF9130
vs
MTM12P08
feature comparison
Pbfree Code |
No
|
|
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
MOTOROLA INC
|
Part Package Code |
TO-3
|
|
Package Description |
HERMETIC SEALED, MODIFIED TO-3, 2 PIN
|
|
Pin Count |
2
|
|
Reach Compliance Code |
unknown
|
unknown
|
Avalanche Energy Rating (Eas) |
81 mJ
|
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
80 V
|
Drain Current-Max (ID) |
11 A
|
12 A
|
Drain-source On Resistance-Max |
0.35 Ω
|
0.3 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-204AA
|
TO-204AA
|
JESD-30 Code |
O-MBFM-P2
|
O-MBFM-P2
|
JESD-609 Code |
e0
|
e0
|
Moisture Sensitivity Level |
NOT SPECIFIED
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
METAL
|
METAL
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
50 A
|
28 A
|
Qualification Status |
COMMERCIAL
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN LEAD
|
TIN LEAD
|
Terminal Form |
PIN/PEG
|
PIN/PEG
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
ECCN Code |
|
EAR99
|
HTS Code |
|
8541.29.00.95
|
Feedback Cap-Max (Crss) |
|
200 pF
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation Ambient-Max |
|
75 W
|
Power Dissipation-Max (Abs) |
|
75 W
|
Turn-off Time-Max (toff) |
|
300 ns
|
Turn-on Time-Max (ton) |
|
200 ns
|
|
|
|
Compare IRF9130 with alternatives
Compare MTM12P08 with alternatives