IRF842-001 vs MTP8N50 feature comparison

IRF842-001 Infineon Technologies AG

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MTP8N50 Motorola Semiconductor Products

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG MOTOROLA INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Case Connection DRAIN DRAIN
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V 500 V
Drain Current-Max (ID) 7 A 8 A
Drain-source On Resistance-Max 1.1 Ω 0.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 28 A 32 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish MATTE TIN OVER NICKEL TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Element Material SILICON SILICON
Base Number Matches 2 4
Package Description FLANGE MOUNT, R-PSFM-T3
HTS Code 8541.29.00.95
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Feedback Cap-Max (Crss) 150 pF
JEDEC-95 Code TO-220AB
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 125 W
Transistor Application SWITCHING
Turn-off Time-Max (toff) 320 ns
Turn-on Time-Max (ton) 210 ns

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