IRF840STRL
vs
STB8NA50
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
STMICROELECTRONICS
Part Package Code
D2PAK
D2PAK
Package Description
SMALL OUTLINE, R-PSSO-G2
SMALL OUTLINE, R-PSSO-G2
Pin Count
4
4
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Case Connection
DRAIN
DRAIN
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
500 V
Drain Current-Max (ID)
8 A
8 A
Drain-source On Resistance-Max
0.85 Ω
0.85 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e0
e3
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
125 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Avalanche Energy Rating (Eas)
350 mJ
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
125 W
Pulsed Drain Current-Max (IDM)
32 A
Compare IRF840STRL with alternatives
Compare STB8NA50 with alternatives