IRF840BPBF
vs
SFF440-28
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
VISHAY SILICONIX
|
SOLID STATE DEVICES INC
|
Package Description |
FLANGE MOUNT, R-PSFM-T3
|
CHIP CARRIER, S-CQCC-N28
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Vishay
|
|
Avalanche Energy Rating (Eas) |
56 mJ
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
500 V
|
500 V
|
Drain Current-Max (ID) |
8.7 A
|
8 A
|
Drain-source On Resistance-Max |
0.85 Ω
|
0.86 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
8 pF
|
|
JEDEC-95 Code |
TO-220AB
|
|
JESD-30 Code |
R-PSFM-T3
|
S-CQCC-N28
|
JESD-609 Code |
e3
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
28
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
RECTANGULAR
|
SQUARE
|
Package Style |
FLANGE MOUNT
|
CHIP CARRIER
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
156 W
|
36 W
|
Pulsed Drain Current-Max (IDM) |
18 A
|
|
Surface Mount |
NO
|
YES
|
Terminal Finish |
MATTE TIN OVER NICKEL
|
|
Terminal Form |
THROUGH-HOLE
|
NO LEAD
|
Terminal Position |
SINGLE
|
QUAD
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Max (toff) |
56 ns
|
|
Turn-on Time-Max (ton) |
58 ns
|
|
Base Number Matches |
1
|
1
|
Part Package Code |
|
LCC
|
Pin Count |
|
28
|
Qualification Status |
|
Not Qualified
|
|
|
|
Compare IRF840BPBF with alternatives
Compare SFF440-28 with alternatives