IRF840ASPBF vs IRF840ASPBF feature comparison

IRF840ASPBF International Rectifier

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IRF840ASPBF Vishay Siliconix

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP VISHAY SILICONIX
Package Description SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Pin Count 3 4
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
kg CO2e/kg 8.8 8.8
Average Weight (mg) 1979.3 1979.3
CO2e (mg) 17417.841 17417.841
Category CO2 Kg 8.8 8.8
EU RoHS Version RoHS 2 (2011/65/EU) RoHS 2 (2011/65/EU)
EU RoHS Exemptions 7(a) 7(a)
Candidate List Date 2015-06-15 2010-12-15
Conflict Mineral Status DRC Conflict Free
Conflict Mineral Status Source CMRT V2.03a
Avalanche Energy Rating (Eas) 510 mJ 510 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V 500 V
Drain Current-Max (ID) 8 A 8 A
Drain-source On Resistance-Max 0.85 Ω 0.85 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 3.1 W
Pulsed Drain Current-Max (IDM) 32 A 32 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Part Package Code D2PAK
JEDEC-95 Code TO-263AB

Compare IRF840ASPBF with alternatives

Compare IRF840ASPBF with alternatives