IRF840ASPBF
vs
IRF840ASPBF
feature comparison
All Stats
Differences Only
Pbfree Code
Yes
Rohs Code
Yes
Yes
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
VISHAY SILICONIX
Package Description
SMALL OUTLINE, R-PSSO-G2
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
4
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
kg CO2e/kg
8.8
8.8
Average Weight (mg)
1979.3
1979.3
CO2e (mg)
17417.841
17417.841
Category CO2 Kg
8.8
8.8
EU RoHS Version
RoHS 2 (2011/65/EU)
RoHS 2 (2011/65/EU)
EU RoHS Exemptions
7(a)
7(a)
Candidate List Date
2015-06-15
2010-12-15
Conflict Mineral Status
DRC Conflict Free
Conflict Mineral Status Source
CMRT V2.03a
Avalanche Energy Rating (Eas)
510 mJ
510 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
500 V
Drain Current-Max (ID)
8 A
8 A
Drain-source On Resistance-Max
0.85 Ω
0.85 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
3.1 W
Pulsed Drain Current-Max (IDM)
32 A
32 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Part Package Code
D2PAK
JEDEC-95 Code
TO-263AB
Compare IRF840ASPBF with alternatives
Compare IRF840ASPBF with alternatives