IRF840AS
vs
IRF840S
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
MOTOROLA INC
Package Description
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
510 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
500 V
500 V
Drain Current-Max (ID)
8 A
8 A
Drain-source On Resistance-Max
0.85 Ω
0.85 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSFM-T3
JESD-609 Code
e0
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
FLANGE MOUNT
Peak Reflow Temperature (Cel)
225
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
3.1 W
Pulsed Drain Current-Max (IDM)
32 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
8
HTS Code
8541.29.00.95
JEDEC-95 Code
TO-220AB
Power Dissipation Ambient-Max
125 W
Compare IRF840AS with alternatives
Compare IRF840S with alternatives