IRF840
vs
MTP8N50E
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
NATIONAL SEMICONDUCTOR CORP
ROCHESTER ELECTRONICS LLC
Package Description
,
CASE 221A-09, 3 PIN
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
Case Connection
DRAIN
DRAIN
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)
8 A
8 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
TO-220AB
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
125 W
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
TIN LEAD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Pbfree Code
Part Package Code
TO-220AB
Pin Count
3
Manufacturer Package Code
CASE 221A-09
Avalanche Energy Rating (Eas)
510 mJ
DS Breakdown Voltage-Min
500 V
Drain-source On Resistance-Max
0.8 Ω
Moisture Sensitivity Level
NOT SPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Pulsed Drain Current-Max (IDM)
32 A
Qualification Status
COMMERCIAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare IRF840 with alternatives
Compare MTP8N50E with alternatives