IRF833
vs
SSP6N55
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Contact Manufacturer
Obsolete
Ihs Manufacturer
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
SAMSUNG SEMICONDUCTOR INC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE
DS Breakdown Voltage-Min
450 V
550 V
Drain Current-Max (ID)
4 A
6 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Number of Elements
1
1
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Transistor Element Material
SILICON
SILICON
Base Number Matches
19
1
Part Package Code
SFM
Package Description
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
570 mJ
Drain-source On Resistance-Max
1.8 Ω
Feedback Cap-Max (Crss)
150 pF
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Terminals
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Power Dissipation Ambient-Max
125 W
Power Dissipation-Max (Abs)
125 W
Pulsed Drain Current-Max (IDM)
24 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
320 ns
Turn-on Time-Max (ton)
210 ns
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