IRF833
vs
RFP6N45
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Contact Manufacturer
Active
Ihs Manufacturer
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
ROCHESTER ELECTRONICS LLC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
450 V
450 V
Drain Current-Max (ID)
4 A
6 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Number of Elements
1
1
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Transistor Element Material
SILICON
SILICON
Base Number Matches
19
5
Pbfree Code
Rohs Code
Case Connection
DRAIN
Drain-source On Resistance-Max
1.25 Ω
JEDEC-95 Code
TO-204AA
JESD-30 Code
O-MBFM-P2
JESD-609 Code
e0
Moisture Sensitivity Level
NOT SPECIFIED
Number of Terminals
2
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Pulsed Drain Current-Max (IDM)
15 A
Qualification Status
COMMERCIAL
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
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