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IRF822 vs IRF821-009 feature comparison

IRF822 National Semiconductor Corporation

Buy Now Datasheet

IRF821-009 Infineon Technologies AG

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP INFINEON TECHNOLOGIES AG
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Drain Current-Max (ID) 2 A 2.5 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0 e3
Number of Elements 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 50 W
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb) MATTE TIN OVER NICKEL
Base Number Matches 14 2
Case Connection DRAIN
DS Breakdown Voltage-Min 450 V
Drain-source On Resistance-Max 3 Ω
JESD-30 Code R-PSFM-T3
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Pulsed Drain Current-Max (IDM) 8 A
Qualification Status Not Qualified
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON
Transistors » Power Field-Effect Transistors
Transistors » Power Field-Effect Transistors

Compare IRF822 with alternatives

Compare IRF821-009 with alternatives