IRF820PBF
vs
IRF820
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
VISHAY SILICONIX
INTERSIL CORP
Part Package Code
TO-220AB
Package Description
ROHS COMPLIANT PACKAGE-3
Pin Count
3
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
210 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
500 V
Drain Current-Max (ID)
2.5 A
2.5 A
Drain-source On Resistance-Max
3 Ω
3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
TO-220AB
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
8 A
8 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
HTS Code
8541.29.00.95
Case Connection
DRAIN
JESD-609 Code
e0
Power Dissipation Ambient-Max
50 W
Power Dissipation-Max (Abs)
50 W
Terminal Finish
Tin/Lead (Sn/Pb)
Turn-off Time-Max (toff)
60 ns
Turn-on Time-Max (ton)
33 ns
Compare IRF820PBF with alternatives
Compare IRF820 with alternatives