IRF820ALPBF
vs
2SJ313
feature comparison
| Pbfree Code |
Yes
|
No
|
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
TOSHIBA CORP
|
| Part Package Code |
TO-262AA
|
SC-67
|
| Package Description |
LEAD FREE, PLASTIC, TO-262, 3 PIN
|
FLANGE MOUNT, R-PSFM-T3
|
| Pin Count |
3
|
3
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
140 mJ
|
|
| Case Connection |
DRAIN
|
ISOLATED
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
500 V
|
180 V
|
| Drain Current-Max (ID) |
2.5 A
|
1 A
|
| Drain-source On Resistance-Max |
3 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-262AA
|
|
| JESD-30 Code |
R-PSIP-T3
|
R-PSFM-T3
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
DEPLETION MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
P-CHANNEL
|
| Power Dissipation-Max (Abs) |
50 W
|
25 W
|
| Pulsed Drain Current-Max (IDM) |
10 A
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
MATTE TIN OVER NICKEL
|
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
NOT SPECIFIED
|
| Transistor Application |
SWITCHING
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
3
|
1
|
| Samacsys Manufacturer |
|
Toshiba
|
|
|
|
Compare IRF820ALPBF with alternatives
Compare 2SJ313 with alternatives