IRF7862TRPBF vs IRF7832PBF feature comparison

IRF7862TRPBF Infineon Technologies AG

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IRF7832PBF Infineon Technologies AG

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description SOP-8
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon Infineon
Avalanche Energy Rating (Eas) 350 mJ 260 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 21 A 20 A
Drain-source On Resistance-Max 0.0033 Ω 0.004 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W 2.5 W
Pulsed Drain Current-Max (IDM) 170 A 160 A
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Qualification Status Not Qualified

Compare IRF7862TRPBF with alternatives

Compare IRF7832PBF with alternatives