IRF7811WGPBF vs RQ3E120GNTB feature comparison

IRF7811WGPBF International Rectifier

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RQ3E120GNTB ROHM Semiconductor

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP ROHM CO LTD
Part Package Code SOIC
Package Description SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-F5
Pin Count 8
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 14 A 12 A
Drain-source On Resistance-Max 0.012 Ω 0.0118 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-F5
JESD-609 Code e3 e3
Moisture Sensitivity Level 2 1
Number of Elements 1 1
Number of Terminals 8 5
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 3.1 W
Pulsed Drain Current-Max (IDM) 109 A 48 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN Tin (Sn)
Terminal Form GULL WING FLAT
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Factory Lead Time 21 Weeks
Samacsys Manufacturer ROHM Semiconductor
Case Connection DRAIN
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10

Compare IRF7811WGPBF with alternatives

Compare RQ3E120GNTB with alternatives