IRF741 vs IRF743 feature comparison

IRF741 Harris Semiconductor

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IRF743 Thomson Consumer Electronics

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR THOMSON CONSUMER ELECTRONICS
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 350 V
Drain Current-Max (ID) 10 A 8 A
Drain-source On Resistance-Max 0.55 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 125 W 125 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 111 ns
Turn-on Time-Max (ton) 62 ns
Base Number Matches 2 2

Compare IRF741 with alternatives

Compare IRF743 with alternatives