IRF7404TRPBF
vs
SI5457DC-T1-GE3
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
VISHAY SILICONIX
Package Description
SO-8
HALOGEN FREE AND ROHS COMPLIANT, 1206-8, CHIPFET-8
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Additional Feature
LOGIC LEVEL COMPATIBLE
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
20 V
20 V
Drain Current-Max (ID)
5.3 A
6 A
Drain-source On Resistance-Max
0.04 Ω
0.036 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
340 pF
195 pF
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
R-PDSO-C8
JESD-609 Code
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Power Dissipation Ambient-Max
25 W
Power Dissipation-Max (Abs)
2.5 W
5.7 W
Pulsed Drain Current-Max (IDM)
27 A
20 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
PURE MATTE TIN
Terminal Form
GULL WING
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
165 ns
85 ns
Turn-on Time-Max (ton)
36 ns
90 ns
Base Number Matches
2
2
Pin Count
8
Reference Standard
IEC-61249-2-21
Transistor Application
SWITCHING
Compare IRF7404TRPBF with alternatives
Compare SI5457DC-T1-GE3 with alternatives