IRF7404TRPBF vs SI5457DC-T1-GE3 feature comparison

IRF7404TRPBF Infineon Technologies AG

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SI5457DC-T1-GE3 Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG VISHAY INTERTECHNOLOGY INC
Package Description SO-8 HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1206-8, CHIPFET-8
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Infineon Vishay
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 20 V
Drain Current-Max (ID) 6.7 A 6 A
Drain-source On Resistance-Max 0.04 Ω 0.036 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 340 pF 195 pF
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-C8
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation Ambient-Max 2.5 W
Power Dissipation-Max (Abs) 2.5 W 5.7 W
Pulsed Drain Current-Max (IDM) 27 A 20 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) MATTE TIN
Terminal Form GULL WING C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 165 ns 85 ns
Turn-on Time-Max (ton) 36 ns 90 ns
Base Number Matches 2 2
Factory Lead Time 19 Weeks
Reference Standard IEC-61249-2-21
Transistor Application SWITCHING

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Compare SI5457DC-T1-GE3 with alternatives