IRF7316TRPBF-1
vs
IRF7316PBF
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INFINEON TECHNOLOGIES AG
Package Description
,
SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Drain Current-Max (ID)
4.9 A
4.9 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level
1
1
Operating Temperature-Max
150 °C
150 °C
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Power Dissipation-Max (Abs)
2 W
2 W
Surface Mount
YES
YES
Base Number Matches
1
2
Factory Lead Time
4 Weeks
Samacsys Manufacturer
Infineon
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas)
140 mJ
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain-source On Resistance-Max
0.058 Ω
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e3
Number of Elements
2
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Pulsed Drain Current-Max (IDM)
30 A
Qualification Status
Not Qualified
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compare IRF7316TRPBF-1 with alternatives
Compare IRF7316PBF with alternatives