IRF7316PBF-1 vs TSM4953DCSRF feature comparison

IRF7316PBF-1 Infineon Technologies AG

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TSM4953DCSRF Taiwan Semiconductor

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Rohs Code Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG TAIWAN SEMICONDUCTOR CO LTD
Package Description , SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Drain Current-Max (ID) 4.9 A 4.9 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 2 W
Surface Mount YES YES
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Base Number Matches 2 1
Additional Feature ULTRA-LOW RESISTANCE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain-source On Resistance-Max 0.06 Ω
JESD-30 Code R-PDSO-G8
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Compare IRF7316PBF-1 with alternatives

Compare TSM4953DCSRF with alternatives