IRF7301PBF
vs
IRF7311PBF
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INTERNATIONAL RECTIFIER CORP
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Infineon
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
20 V
20 V
Drain Current-Max (ID)
5.2 A
6.6 A
Drain-source On Resistance-Max
0.05 Ω
0.029 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
MS-012AA
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
2
2
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
1.4 W
1.4 W
Pulsed Drain Current-Max (IDM)
21 A
26 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Pbfree Code
Part Package Code
SOIC
Package Description
LEAD FREE, SO-8
Pin Count
8
HTS Code
8541.29.00.95
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas)
100 mJ
Power Dissipation Ambient-Max
2 W
Compare IRF7301PBF with alternatives
Compare IRF7311PBF with alternatives