IRF7105TR
vs
IRF9952
feature comparison
All Stats
Differences Only
Rohs Code
No
No
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
INTERNATIONAL RECTIFIER CORP
Part Package Code
SOIC
Package Description
SO-8
Pin Count
8
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Additional Feature
LOGIC LEVEL COMPATIBLE
HIGH RELIABILITY
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
25 V
30 V
Drain Current-Max (ID)
3.5 A
3.5 A
Drain-source On Resistance-Max
0.1 Ω
0.1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
JESD-609 Code
e0
e0
Moisture Sensitivity Level
1
1
Number of Elements
2
2
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
N-CHANNEL AND P-CHANNEL
Power Dissipation Ambient-Max
2 W
Power Dissipation-Max (Abs)
2 W
2 W
Pulsed Drain Current-Max (IDM)
14 A
16 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Avalanche Energy Rating (Eas)
44 mJ
Compare IRF7105TR with alternatives
Compare IRF9952 with alternatives