IRF7103TRPBF
vs
AUIRF7103QTR
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Transferred
|
Obsolete
|
Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
INFINEON TECHNOLOGIES AG
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Additional Feature |
LOGIC LEVEL COMPATIBLE
|
HIGH RELIABILITY
|
Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
50 V
|
50 V
|
Drain Current-Max (ID) |
3 A
|
3 A
|
Drain-source On Resistance-Max |
0.13 Ω
|
0.13 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-G8
|
R-PDSO-G8
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
2
|
2
|
Number of Terminals |
8
|
8
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
175 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
2 W
|
|
Power Dissipation-Max (Abs) |
2 W
|
2.4 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
MATTE TIN
|
Matte Tin (Sn)
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
40
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
Package Description |
|
ROHS COMPLIANT, SOP-8
|
Factory Lead Time |
|
4 Weeks
|
Samacsys Manufacturer |
|
Infineon
|
Avalanche Energy Rating (Eas) |
|
22 mJ
|
JEDEC-95 Code |
|
MS-012AA
|
Pulsed Drain Current-Max (IDM) |
|
25 A
|
|
|
|
Compare IRF7103TRPBF with alternatives
Compare AUIRF7103QTR with alternatives