IRF6665
vs
IRF6665PBF
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INTERNATIONAL RECTIFIER CORP
Package Description
CHIP CARRIER, R-XBCC-N3
CHIP CARRIER, R-XBCC-N2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Infineon
Additional Feature
HIGH RELIABILITY
HIGH RELIABILITY
Avalanche Energy Rating (Eas)
11 mJ
11 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
4.2 A
4.2 A
Drain-source On Resistance-Max
0.062 Ω
0.062 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-XBCC-N3
R-XBCC-N2
JESD-609 Code
e4
e4
Moisture Sensitivity Level
3
3
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
UNSPECIFIED
UNSPECIFIED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
CHIP CARRIER
CHIP CARRIER
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
34 A
34 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Silver/Nickel (Ag/Ni)
SILVER NICKEL
Terminal Form
NO LEAD
NO LEAD
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
30
30
Transistor Application
AMPLIFIER
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
5
1
Pbfree Code
Pin Count
2
Power Dissipation-Max (Abs)
42 W
Compare IRF6665 with alternatives
Compare IRF6665PBF with alternatives