IRF6644TRPBF vs IRF6644 feature comparison

IRF6644TRPBF Infineon Technologies AG

Buy Now Datasheet

IRF6644 International Rectifier

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG INTERNATIONAL RECTIFIER CORP
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Additional Feature LOW CONDUCTION LOSS
Avalanche Energy Rating (Eas) 86 mJ 220 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 10 A 10.3 A
Drain-source On Resistance-Max 0.013 Ω 0.013 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XBCC-N3 R-XBCC-N3
JESD-609 Code e1 e4
Moisture Sensitivity Level 1 3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED UNSPECIFIED
Package Shape RECTANGULAR RECTANGULAR
Package Style CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 2.8 W
Power Dissipation-Max (Abs) 89 W 89 W
Pulsed Drain Current-Max (IDM) 228 A 82 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu) SILVER NICKEL
Terminal Form NO LEAD NO LEAD
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Package Description ISOMETRIC-3
Pin Count 3
Transistor Application SWITCHING

Compare IRF6644TRPBF with alternatives

Compare IRF6644 with alternatives