IRF6638TR1PBF
vs
IRF6638PBF
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
INTERNATIONAL RECTIFIER CORP
Package Description
ROHS COMPLIANT, ISOMETRIC-3
ROHS COMPLIANT, ISOMETRIC-3
Pin Count
3
3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Additional Feature
LOW CONDUCTION LOSS
LOW CONDUCTION LOSS
Avalanche Energy Rating (Eas)
37 mJ
37 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
30 V
Drain Current-Max (ID)
25 A
25 A
Drain-source On Resistance-Max
0.0029 Ω
0.0029 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-XBCC-N3
R-XBCC-N3
JESD-609 Code
e4
e4
Moisture Sensitivity Level
3
3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
UNSPECIFIED
UNSPECIFIED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
CHIP CARRIER
CHIP CARRIER
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
89 W
89 W
Pulsed Drain Current-Max (IDM)
200 A
200 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
SILVER NICKEL
SILVER NICKEL
Terminal Form
NO LEAD
NO LEAD
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
30
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Compare IRF6638TR1PBF with alternatives
Compare IRF6638PBF with alternatives