IRF6629TRPBF
vs
IRF6629PBF
feature comparison
Pbfree Code |
Yes
|
Yes
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
INTERNATIONAL RECTIFIER CORP
|
Package Description |
ROHS COMPLIANT, ISOMETRIC-3
|
ROHS COMPLIANT, ISOMETRIC-3
|
Pin Count |
3
|
3
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
1170 mJ
|
1170 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
25 V
|
25 V
|
Drain Current-Max (ID) |
29 A
|
29 A
|
Drain-source On Resistance-Max |
0.0021 Ω
|
0.0021 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-XBCC-N3
|
R-XBCC-N3
|
JESD-609 Code |
e4
|
e4
|
Moisture Sensitivity Level |
3
|
3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
100 W
|
100 W
|
Pulsed Drain Current-Max (IDM) |
230 A
|
230 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
SILVER NICKEL
|
SILVER NICKEL
|
Terminal Form |
NO LEAD
|
NO LEAD
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Additional Feature |
|
LOW CONDUCTION LOSS
|
|
|
|