IRF6618TR1PBF
vs
IRF6618
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
INTERNATIONAL RECTIFIER CORP
Package Description
ISOMETRIC-3
ISOMETRIC-3
Pin Count
3
3
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
210 mJ
210 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
30 V
Drain Current-Max (ID)
30 A
30 A
Drain-source On Resistance-Max
0.0022 Ω
0.0022 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-XBCC-N3
R-XBCC-N3
JESD-609 Code
e4
Moisture Sensitivity Level
3
3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
UNSPECIFIED
UNSPECIFIED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
CHIP CARRIER
CHIP CARRIER
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
89 W
89 W
Pulsed Drain Current-Max (IDM)
240 A
240 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
SILVER NICKEL
Terminal Form
NO LEAD
NO LEAD
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Compare IRF6618TR1PBF with alternatives
Compare IRF6618 with alternatives