IRF644NSTRL
vs
IRF644NSPBF
feature comparison
All Stats
Differences Only
Pbfree Code
No
Yes
Rohs Code
No
Yes
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
INTERNATIONAL RECTIFIER CORP
Package Description
SMALL OUTLINE, R-PSSO-G2
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
3
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
HIGH RELIABILITY, AVALANCHE RATED
Avalanche Energy Rating (Eas)
180 mJ
180 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
250 V
250 V
Drain Current-Max (ID)
14 A
14 A
Drain-source On Resistance-Max
0.24 Ω
0.24 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e0
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
225
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
150 W
150 W
Pulsed Drain Current-Max (IDM)
56 A
56 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Compare IRF644NSTRL with alternatives
Compare IRF644NSPBF with alternatives